Epitaxie en phase vapeur aux organométalliques et caractérisation de semi-conducteur III-As sur substrat silicium dans une plateforme microélectronique

摘要

The microelectronic devices designed in the silicon technology field are intrinsically limited due to the nature of this material and its derivatives (Si, SiO2, SiGe…). One of the solutions to further reach enhanced performances lies in the introduction of new materials within silicon technology. Good candidates for silicon replacement as a conduction channel are the arsenide-based III-V semiconductors (III-As), in order to benefit from their outstanding electronic transfer properties. However, as a preliminary for the achievement of such devices, III-As films with good crystalline quality have to be obtained on silicon substrates. Indeed, those two materials display properties differences this work intends to overcome by following crystalline growth strategies.This PhD work deeply study the growth of GaAs and InGaAs films on 300 mm-diameter silicon substrates by metalorganic vapour phase epitaxy. In the first instance, efforts will be put on the elimination of one of the crystalline defects being the most prohibitive for the use of such materials: antiphase boundaries. Then, the achievement of III-As quantum heterostructures will enable, by optical emission analysis (photo- and cathodoluminescence), to reflect the global and local quality of the resultant epitaxial films. Finally, localised growth, in decananometric designs, preliminary performed on silicon substrates, will be carried out, with the aim of understanding the defects reduction mechanisms for those geometries.