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AlGaN/GaN Dual-Channel Lateral Field-Effect Rectifier With Punchthrough Breakdown Immunity and Low On-Resistance

机译：具有击穿击穿抗扰度和低导通电阻的AlGaN / GaN双通道横向场效应整流器

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Zhou Chunhua; Chen Wanjun; Piner Edwin L.; Chen Kevin J.;
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年度 2010
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1. AlGaN/GaN Dual-Channel Lateral Field-Effect Rectifier With Punchthrough Breakdown Immunity and Low On-Resistance [J] . Chunhua Zhou, Wanjun Chen, Piner E.L., Electron Device Letters, IEEE . 2010,第1期

机译：具有击穿击穿抗扰度和低导通电阻的AlGaN / GaN双通道横向场效应整流器
2. Schottky-MOS Hybrid Anode AlGaN/GaN Lateral Field-Effect Rectifier With Low Onset Voltage and Improved Breakdown Voltage [J] . Jingnan Gao, Maojun Wang, Ruiyuan Yin, IEEE Electron Device Letters . 2017,第10期

机译：具有低启动电压和改进的击穿电压的肖特基-MOS混合阳极AlGaN / GaN横向场效应整流器
3. A low turn-on voltage AlGaN/GaN lateral field-effect rectifier compatible with p-GaN gate HEMT technology [J] . Wang Fangzhou, Chen Wanjun, Wang Zeheng, Semiconductor science and technology . 2021,第3期

机译：低开启电压AlGaN / GaN横向场效应整流器与P-GaN门HEMT技术兼容
4. AlGaN/GaN Dual-Channel Lateral Field-Effect Rectifier with Punchthrough Breakdown Immunity and Low On-Resistance [C] . Chunhua Zhou, Wanjun Chen, Edwin L. Piner, International conference on compound semiconductor Manufacturing Technology;CS MANTECH . 2011

机译：具有击穿击穿抗扰度和低导通电阻的AlGaN / GaN双通道横向场效应整流器
5. A novel trench lateral power MOSFET with high breakdown voltage and low on-resistance [D] . Fujishima, Naoto 1998

机译：具有高击穿电压和低导通电阻的新型沟槽横向功率MOSFET
6. High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer [O] . Chao Yang, Xiaorong Luo, Tao Sun, 2019

机译：在SiNx钝化层中注入氟离子的高击穿电压和低动态导通电阻AlGaN / GaN HEMT
7. AlGaN/GaN Dual-Channel Lateral Field-Effect Rectifier with Punchthrough Breakdown Immunity and Low On-Resistance [O] . Chunhua Zkou, Wanjun Chen, Edwin L. Piner, 2015

机译：具有穿通击穿抗扰度和低导通电阻的alGaN / GaN双通道横向场效应整流器

AlGaN/GaN Dual-Channel Lateral Field-Effect Rectifier With Punchthrough Breakdown Immunity and Low On-Resistance

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