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Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy

机译：用分子束外延研究在中温缓冲层上生长的GaN薄膜

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Lu LW; Fong WK; Zhu CF; Leung BH; Surya C; Wang J; Ge WK;
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年度 2002
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1. High-mobility GaN epilaye grown by RF plasma-assisted molecular beam epitaxy on intermediate-temperature GaN buffer layer [J] . W. K Fong, C F Zhu Journal of Crystal Growth . 2001,第3期

机译：RF等离子体辅助分子束外延在中温GaN缓冲层上生长的高迁移率GaN外延层
2. Influence of double buffer layers on properties of Ga-polarity GaN films grown by rf-plasma assisted molecular-beam epitaxy [J] . C.F. Zhu, J.Q. Xie, W.K. Fong, Materials Letters . 2003,第16a17期

机译：双缓冲层对射频等离子体辅助分子束外延生长的Ga极性GaN薄膜性能的影响
3. Influence of an embedded low-temperature AlN strain relaxation layer on the strain states and the buffer characteristics of GaN films grown on (110) Si substrates by using ammonia molecular beam epitaxy [J] . Noh Young-Kyun, Kwon Han-Chul, Oh Jae-Eung, Journal of the Korean Physical Society . 2015,第11期

机译：埋入式低温AlN应变弛豫层对（110）Si衬底上通过氨分子束外延生长的GaN薄膜的应变状态和缓冲特性的影响
4. A study on the growth of cubic GaN films using an AlGaAs buffer layer grown on GaAs (100) by plasma-assisted molecular beam epitaxy [C] . Ryuhei Kimura, Kiyoshi Takahashi, H. T. Grahn MRS Meeting . 2001

机译：通过等离子体辅助分子束外延生长在GaAs（100）上生长的藻类缓冲层的立方GaN薄膜生长研究
5. Studies of arsenic incorporation and P-type doping in epitaxial mercury cadmium telluride thin films grown by molecular beam epitaxy. [D] . Zandian, Majid. 2003

机译：分子束外延生长外延汞碲化镉薄膜中砷的掺入和P型掺杂的研究。
6. Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy [O] . Yi Gu, Kai Wang, Haifei Zhou, 2014

机译：分子束外延生长InPBi薄膜的结构和光学表征
7. Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy [O] . Lu LW, Fong WK, Zhu CF, 2002

机译：用分子束外延研究在中温缓冲层上生长的GaN薄膜

Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy

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