GaS and GaSe nanowalls and their transformation to $Ga_{2}O_{3}$ and GaN nanowalls

摘要

Two-dimensional nanowalls of GaS and GaSe are obtained by thermal exfoliation around 900 degrees C, and transformed to Ga2O3 and GaN nanowalls upon reaction with air and ammonia respectively at 800 degrees C, while maintaining dimensional integrity.