Structural, optical, and electrical properties of bulk single crystals of InAsx Sb(1–x) grown by rotatory Bridgman method

摘要

Radially-homogeneous and single-phase InAsx Sb(1–x) crystals, up to 5.0 at. % As concentration, have been grown using the rotatory Bridgman method. Single crystallinity has been confirmed by x-ray and electron diffraction studies. Infrared transmission spectra show a continuous decrease in optical energy gap with the increase of arsenic content in InSb. The measured values of mobility and carrier density at room temperature (for x =.05) are 5.6×10 4 cm2/V s and 2.04×10 16 cm–3, respectively.