Abstract. Transparent conducting tin oxide thin films have been prepared by electron beam evaporation and spray pyrolysis methods. Structural, optical and electrical properties were studied under different preparation conditions like substrate temperature, solution flow rate and rate of deposition. Resistivity of undoped evaporated films varied from 2.65× $10^{-2}$ $Omega-cm$ to 3.57× $10^{-3}$ $Omega-cm$ in the temperature range 150–200°C. For undoped spray pyrolyzed films, the resistivity was observed to be in the range 1.2 × $10^{-1}$ to 1.69 × $10^{-2}$ $Omega-cm$ in the temperature range 250–370°C. Hall effect measurements indicated that the mobility as well as carrier concentration of evaporated films were greater than that of spray deposited films. The lowest resistivity for antimony doped tin oxide film was found to be 7.74×$10^{-4}$ Omega-cm, which was deposited at 350°C with 0.26 g of $SbCl_3$ and 4 g of $SnCl_4$ $(SbCl_3/SnCl_4 = 0.065)$ .Evaporated films were found to be amorphous in the temperature range up to 200°C, whereas spray pyrolyzed films prepared at substrate temperature of 300–370°C were polycrystalline. The morphology of tin oxide films was studied using SEM.
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