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Temperature dependence of density of states near the Fermi level in a strain-free epitaxial film of the hole-doped manganite $La_{0.7}Ca_{0.3}MnO_{3}$

机译:掺杂空穴的锰矿$ La_ {0.7} Ca_ {0.3} MnO_ {3} $的无应变外延膜中费米能级附近状态密度的温度依赖性

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摘要

Scanning tunneling spectroscopy measurements were performed on an epitaxial thin film of $La_{0.7}Ca_{0.3}MnO_{3}$ grown on a $NdGaO_{3}$ substrate. The temperature variation of the density of states (DOS) close to the ferromagnetic transition temperature $(T_c)$ was investigated. The strain-free film exhibiting a sharp metal-insulator transition at $T_p$ approximate to $T_c$ approximate to 268 K shows no phase separation as seen by the conductivity map, allowing unambiguous determination of the tunneling spectra as a function of T. The temperature dependence of the conductance (dI/dV) curves and the normalized DOS clearly indicate a depletion in DOS near $T_c$, which fills up as the sample is cooled below $T_c$. The metal-insulator transition at $T_c$ also shows up in the bias dependence of the tunneling curve as the temperature is changed across the transition. In the metallic phase we find that the DOS is similar to what is expected in a correlated metal.
机译:在生长在$ NdGaO_ {3} $衬底上的$ La_ {0.7} Ca_ {0.3} MnO_ {3} $的外延薄膜上执行扫描隧道光谱学测量。研究了接近铁磁转变温度$(T_c)$的状态密度(DOS)的温度变化。无应变薄膜在$ T_p $近似于$ T_c $近似于268 K时表现出尖锐的金属-绝缘体转变,如电导率图所示,没有相分离现象,从而可以明确确定隧道光谱与T的关系。电导率(dI / dV)曲线和归一化DOS的温度相关性清楚地表明DOS附近$ T_c $耗尽,当样品冷却到$ T_c $以下时,DOS耗尽。 $ T_c $处的金属-绝缘体跃迁也随隧道温度的变化而随隧穿曲线的偏差而变化。在金属相中,我们发现DOS与相关金属中的DOS相似。

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