Electronic conduction in bulk selenium-tellurium $(Se_{1-x}Te_x)$ glasses at high pressures and at low temperatures

摘要

The electrical resistivity of bulk $Se_{1-x}Te_x$, glasses is reported as a function of pressure (up to 8 GPa) and temperature (down to 77 K). The activation energy for electronic conduction has been calculated at different pressures. The samples with $0leq x leq 0.06$ show a single activation energy throughout the temperature range of investigations. On the other hand samples with $0.08 leq x leq 0.3$ show two activation energies in the different regions of temperature. The observed behaviour has been explained on the basis of band picture of amorphous semiconductors.