首页> 外文OA文献 >Study of fast transients generated in a GIS bus duct in compressed $SF_6-N_2$ gas mixtures containing lower percentages of $SF_6$
【2h】

Study of fast transients generated in a GIS bus duct in compressed $SF_6-N_2$ gas mixtures containing lower percentages of $SF_6$

机译:研究在GIS母线管道中压缩的$ SF_6-N_2 $混合气体中所占百分比较低的$ SF_6 $的快速瞬变

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

This paper deals with the study of Very Fast Transient Overvoltages (VFTO) with $SF_6-N_2$ gas mixture as the insulating medium, but with lower percentages of $SF_6$ in the mixture. The investigations are performed using a laboratory model bus duct. A capacitive voltage sensor was used to measure the peak VFTO and temporal characteristics. Measurements were carried out in $SF_6-N_2$ gas mixtures wherein the concentration of $SF_6$ was varied from 0 to 20% over a pressure range of 1 to 5 bars. The results are then compared with those obtained for pure $SF_6$. The VFTO characteristics obtained for SF6 and $SF_6-N_2$ mixtures show similar trends in variations. The levels of surge peak magnitudes are less than 2.0 p.u. in the experimental pressure range in all the cases. In $N_2$, the VFTO level remains almost constant with increase in pressure whereas in the case of mixtures, the VFTO level was found to increase with increase in pressure as well as with increase in the percentage of $SF_6$ in the mixture. In mixtures, no significant difference in the VFTO levels is seen between 2-4 bars, although this fact is more pronounced at percentages of $SF_6$ higher than 5%. This can be attributed to the occurrence of corona stabilization in the breakdown process.
机译:本文研究了以$ SF_6-N_2 $气体混合物为绝缘介质,但混合物中$ SF_6 $的百分比较低的超快速瞬态过电压(VFTO)的研究。使用实验室模型母线槽进行研究。电容式电压传感器用于测量峰值VFTO和时间特性。在$ SF_6-N_2 $气体混合物中进行测量,其中$ SF_6 $的浓度在1至5 bar的压力范围内为0%至20%。然后将结果与纯SF_6 $获得的结果进行比较。 SF6和$ SF_6-N_2 $混合物获得的VFTO特性显示出相似的变化趋势。喘振峰值幅度的水平小于2.0p.u。在所有情况下均处于实验压力范围内。在$ N_2 $中,VFTO水平随压力增加而几乎保持不变,而在混合物的情况下,发现VFTO水平随压力增加以及混合物中SF_6 $的百分比增加而增加。在混合物中,VFTO水平在2-4巴之间没有显着差异,尽管在$ SF_6 $的百分比高于5%的情况下,这一事实更为明显。这可以归因于击穿过程中电晕稳定的发生。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号