首页> 外文OA文献 >Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography.

【2h】

Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography.

机译：蚀刻对AFM光刻图形化的硅纳米线晶体管形成的影响。

页面导航

摘要
著录项
相似文献
相关主题

摘要

Anisotropic etching of silicon has been widely used in fabrication of MEMS devices for many years. In this work, TMAH and KOH with IPA are used to etch silicon nanowire transistor patterns.udud

机译：多年来，硅的各向异性蚀刻已广泛用于MEMS器件的制造中。在这项工作中，带有IPA的TMAH和KOH用于蚀刻硅纳米线晶体管图案。

著录项

作者
Abdullah A. Makarimi; Hutagalung Sabar D.; Lockman Zainovia;
展开▼
作者单位

展开▼
年度 2010
总页数
原文格式 PDF
正文语种 {"code":"en","name":"English","id":9}
中图分类

相似文献

外文文献
中文文献
专利

1. SILICON NANOWIRE TRANSISTOR FABRICATED BY AFM NANOLITHOGRAPHY FOLLOWED BY WET CHEMICAL ETCHING PROCESS [J] . K. C. LEW, SABAR D. HUTAGALUNG International journal of nanoscience . 2010,第4期

机译：通过AFM纳米照相术制造的硅纳米电子晶体管，接着进行湿法化学蚀刻工艺
2. Single-electron transistor structures based on silicon-on-insulator silicon nanowire fabrication by scanning probe lithography and wet etching [J] . J. T. Sheu, K. S. You, C. H. Wu, Journal of Vacuum Science & Technology. B, Microelectronics Processing and Phenomena . 2002,第6期

机译：基于绝缘体上硅纳米线通过扫描探针光刻和湿法蚀刻制造的单电子晶体管结构
3. Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography [J] . Khatijah Aisha Yaacob, Siti Noorhaniah Yusoh Beilstein Journal of Nanotechnology . 2016,第1期

机译：氢氧化四甲铵/异丙醇湿法刻蚀对AFM光刻制备的硅纳米线的几何形状和表面粗糙度的影响
4. Current-Voltage Characteristics of Side-Gated Silicon Nanowire Transistor Fabricated by AFM Lithography [C] . SABAR D. HUTAGALUNG, KAM C. LEW International Conference on Quality in Research (QiR 2011) . 2011

机译：AFM光刻制造的侧门控硅纳米线晶体管的电流电压特性
5. Cellular response of one-dimensional silicon nanowires and the effect of etching silicon (111) substrates with hydrofluoric acid prior to nanowire growth. [D] . Tanaudommongkon, Asama. 2009

机译：一维硅纳米线的细胞响应以及在纳米线生长之前用氢氟酸蚀刻硅（111）基板的效果。
6. Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography [O] . Siti Noorhaniah Yusoh, Khatijah Aisha Yaacob 2016

机译：氢氧化四甲铵/异丙醇湿法刻蚀对AFM光刻制备的硅纳米线的几何形状和表面粗糙度的影响
7. Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography. [O] . Abdullah A. Makarimi, Hutagalung Sabar D., Lockman Zainovia 2010

机译：蚀刻对AFM光刻图形化的硅纳米线晶体管形成的影响。

Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography.

摘要

著录项

相似文献

相关主题

期刊订阅