High Sensitivity pH Sensor Based on Porous Siliconud(PSi) Extended Gate Field-Effect Transistor

摘要

In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effectudtransistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nmudwith a depth of approximately 42 �m. The results of testing PSi for hydrogen ion sensing in differentudpH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered audsuper Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresisudvalues of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop,udrespectively. The result of this study reveals a promising application of PSi in the field for detectingudhydrogen ions in different solutions.