The authors report a strong field effect observed at room temperature in epitaxially synthesized, as opposed to exfoliated, graphene. The graphene formed on the silicon face of a 4H silicon carbide substrate was photolithographically patterned into isolated active regions for the semimetal graphene-based transistors. Gold electrodes and a polymer dielectric were used in the top-gate transistors. The demonstration of a field effect mobility of 535 cm2/V s was attributed to the transistor geometry that maximizes conductance modulation, although the mobility is lower than observed in exfoliated graphene possibly due to grain boundaries caused by the rough morphology of the substrate surface.
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机译：作者报告说，在室温下，外延合成的石墨烯与剥离的石墨烯相反，具有很强的场效应。将在4H碳化硅衬底的硅表面上形成的石墨烯光刻图形化为基于半金属石墨烯的晶体管的隔离有源区。在顶栅晶体管中使用了金电极和聚合物电介质。场效应迁移率证明为535 cm2 / V s，这归因于晶体管几何结构，该晶体管几何结构最大程度地提高了电导调制，尽管该迁移率低于剥离石墨烯中观察到的迁移率，这可能是由于基板表面的粗糙形态导致的晶界。
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