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Growth and characterisation of Gd5(SixGe1−x)4 thin film

机译:Gd5(SixGe1-x)4薄膜的生长与表征

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摘要

We report for the first time successful growth of magnetic thin films containing the Gd5(Six Ge1−x)4 phase, which is expected to show giant magnetocaloric properties. The film wasdeposited by Pulsed Laser Deposition (PLD) on a (001) silicon wafer at 200  °C from a polycrystalline Gd5Si2.09 Ge 1.91 target prepared by arc melting. PLD was achieved using a femto second laser with a repetition rate of 1 kHz, and a pulse energy of up to 3.5 mJ. The average film thickness was measured to be 400 nm using a Scanning Electron Microscopy and the composition of the film was analyzed using Energy Dispersive Spectroscopy and found to be close to the target composition. X-Ray Diffraction analysis confirmed the presence of Gd5Si2Ge 2 monoclinic structure. Magnetic moment vs. magnetic field measurement confirmed that the film was ferromagnetic at a temperature of 200 K. The transition temperature of the film was determined from a plot of magnetic moment vs. temperature. The transition temperature was between 280 and 300 K which is close to the transition temperature of the bulk material.
机译:我们首次报告了包含Gd5(Six Ge1-x)4相的磁性薄膜的成功生长,这有望显示出巨大的磁热特性。通过脉冲激光沉积(PLD)在200°C的条件下,通过电弧熔化制备的多晶Gd5Si2.09 Ge 1.91靶将薄膜沉积在(001)硅晶片上。使用飞秒第二激光器以1 secondkHz的重复频率和高达3.5 mJ的脉冲能量实现PLD。使用扫描电子显微镜测得的平均膜厚度为400 nm,并使用能量分散光谱法分析了膜的组成,发现其接近目标组成。 X射线衍射分析证实了Gd5Si2Ge 2单斜晶结构的存在。磁矩对磁场的测量证实了该膜在200 K的温度下是铁磁性的,该膜的转变温度由磁矩对温度的曲线图确定。转变温度在280至300 K之间,接近散装材料的转变温度。

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