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Growth and fabrication of GaNInGaN microdisk laser structures

机译：GaNInGaN微盘激光器结构的生长与制造

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Solid State Electronics 39 (1996) 311-313. doi:10.1016/0038-1101(95)00177-8

机译：固态电子学39（1996）311-313。 doi：10.1016 / 0038-1101（95）00177-8

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Department of Materials Science and Engineering University of Florida Gainesville FL 32611 U.S.A. ( host institution ); Abernathy C.R.; Pearton S.J.; MacKenzie J.D.; Mileham J.R.; Bharatan S.R.; Krishnamoorthy V.; Jones K.S.;
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年度 1996
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1. Free-standing, optically pumped, GaN/InGaN microdisk lasers fabricated by photoelectrochemical etching [J] . Haberer ED, Sharma R, Meier C, Applied Physics Letters . 2004,第22期

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2. Finite growth of InGaN/GaN triple-quantum-well microdisks on LiAlO2 substrate [J] . Cheng-Da Tsai, Ikai Lo, Ying-Chieh Wang, AIP Advances . 2018,第9期

机译：在LiAlO2衬底上InGaN / GaN三量子阱微盘的有限生长
3. Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth [J] . Zengcheng Li, Jianping Liu, Meixin Feng, Applied Physics Letters . 2013,第15期

机译：外延生长期间抑制绿色激光二极管结构中InGaN / GaN量子阱的热降解
4. Thermal degradation of InGaN/GaN quantum wells in blue laser diode structure during the epitaxial growth [C] . Kun Zhou, Massao Ikeda, Jianping Liu, International Conference on Optoelectronics and Microelectronics Technology and Application . 2017

机译：外延生长期间蓝色激光二极管结构中InGaN / GaN量子阱的热降解
5. Optical Modeling, MOCVD Growth, and Development of Novel Fabrication Technologies for Semi-polar (20-21) GaN Flip-chip Edge Emitting Lasers Structures [D] . Saud Abbas, Arwa. 2020

机译：光学建模，MOCVD生长和新型制造技术的半极（20-21）GaN倒装芯片边缘发射激光器结构
6. Effect of Threading Dislocations on the Quality Factorof InGaN/GaN Microdisk Cavities [O] . Tim J. Puchtler, *, Alexander Woolf, -1

机译：螺纹错位对品质因数的影响InGaN / GaN微盘腔的设计
7. Growth and fabrication of GaNInGaN microdisk laser structures [O] . Department of Materials Science and Engineering University of Florida Gainesville FL 32611 U.S.A. ( host institution ), Abernathy C.R. ( author ), Pearton S.J. ( author ), 1996

机译：GaNInGaN微盘激光器结构的生长与制造
8. MBE Growth and Properties of GaN, InGaN and GaN/InGaN Quantum Well Structures for Laser Diode Applications [R] . Schetzina, J. F. 2001

机译：用于激光二极管应用的GaN，InGaN和GaN / InGaN量子阱结构的mBE生长和性质

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