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Fabrication and performance studies of TiOz and Porphyrin Heterojunction based organic photodetector

机译:TiOz和卟啉异质结基有机光电探测器的制备及性能研究

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摘要

Organic photodetector of TiOz/Porphyrin has been fabricated and its performance has been tested in dark and underudvaiious illumination of light intensityfrom 20 to 100 mWcm-'. Foursamples of porphyrin films have been used in the device,udnamely 1, 3, 5 and 7 times spin coating. TiOz films were deposited onto ITO covered glass substrate by controlledudhydrolysis technique assisted with spin coating technique. Then porphyrin film was deposited on TiOz using spin coatingudtechnique. The films of TiOz/porphyrin has absorbance maximum at 660 nm, which is in the red region. An aluminiumudelectrode was prepared on top of porphyrin films by electron beam evaporation technique. The device shows rectificationudbehaviour in the dark and shows photosensitization effect under illumination of visible lights. The device with 3 times spinudcoating of porphyrin shows the highest J"" of 1.02 pAcm'2 and Vo" of 520 mV.ud(Received November 2, 2009; accepted November 12,2009)udKeyv,ords : Photodetector, Photosensitizing, Porphyrin, Ti02
机译:制备了TiOz /卟啉的有机光电探测器,并在黑暗和 u u u光度下从20到100 mWcm-1的光强度下测试了其性能。装置中使用了四个样品的卟啉薄膜,即旋涂的1、3、5和7倍。 TiOz膜通过控制过水解技术与旋涂技术的辅助而沉积在ITO覆盖的玻璃基板上。然后使用旋涂超声技术将卟啉膜沉积在TiOz上。 TiOz /卟啉薄膜在红色区域的最大吸光度为660 nm。采用电子束蒸发技术在卟啉膜上制备了铝电极。该设备在黑暗中显示出整流行为,并在可见光照射下显示出光敏效应。进行了3次卟啉旋涂的设备显示出最高的J“”为1.02 pAcm'2,Vo“为520 mV。 ud(2009年11月2日接收; 2009年11月12日接受) udKeyv,ords:光电探测器,光敏性,卟啉,TiO 2

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