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Damage and strain in single-layer graphene induced by very-low-energy electron-beam irradiation

机译:低能电子束辐照在单层石墨烯中的损伤和应变

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摘要

From the analysis of the ratio of D peak intensity to G peak intensity in Raman spectroscopy, electron beam irradiation with energies of 100 eV was found to induce damage in single-layer graphene. The damage becomes larger with decreasing electron beam energy. Internal strain in graphene induced by damage under irradiation is further evaluated based on G peak shifts. The dose-dependent internal strain was approximately 2.22% cm2/mC at 100 eV and 2.65 × 10−2% cm2/mC at 500 eV. The strain induced by the irradiation showed strong dependence on electron energy.
机译:通过分析拉曼光谱中D峰强度与G峰强度之比,发现能量为100 eV的电子束辐照会引起单层石墨烯的损伤。随着电子束能量的降低,损害变得更大。基于G峰位移,进一步评估了在辐照下由损伤引起的石墨烯内部应变。剂量依赖性内应变在100 eV时约为2.22%cm2 / mC,在500 eV时约为2.65×10-2%cm2 / mC。辐照引起的应变显示出对电子能量的强烈依赖性。

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