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Impurity-limited resistance and phase interference of localized impurities under quasi-one dimensional nano-structures

机译:准一维纳米结构下局域杂质的杂质限制电阻和相干扰

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摘要

The impurity-limited resistance and the effect of the phase interference among localized multiple impurities in the quasi-one dimensional (quasi-1D) nanowirestructures are systematically investigated under the framework of the scattering theory. We derive theoretical expressions of the impurity-limited resistance in the nanowire under the linear response regime from the Landauer formula and from the Boltzmann transport equation (BTE) with the relaxation time approximation. We show that the formula from the BTE exactly coincides with that from the Landauer approach with the weak-scattering limit when the energy spectrum of the in-coming electrons from the reservoirs is narrow and, thus, point out a possibility that the distinction of the impurity-limited resistances derived from the Landauer formula and that of the BTE could be made clear. The derived formulas are applied to the quasi-1D nanowiresdoped with multiple localized impurities with short-range scattering potential and the validity of various approximations on the resistance are discussed. It is shown that impurity scattering becomes so strong under the nanowirestructures that the weak-scattering limit breaks down in most cases. Thus, both phase interference and phase randomization simultaneously play a crucial role in determining the impurity-limited resistance even under the fully coherent framework. When the impurity separation along the wire axis direction is small, the constructive phase interference dominates and the resistance is much greater than the average resistance. As the separation becomes larger, however, it approaches the series resistance of the single-impurity resistance due to the phase randomization. Furthermore, under the uniform configuration of impurities, the space-average resistance of multiple impurities at room temperature is very close to the series resistance of the single-impurity resistance, and thus, each impurity could be regarded as an independent scattering center. The physical origin of this “self-averaging” under the fully coherent environments is attributed to the broadness of the energy spectrum of the in-coming electrons from the reservoirs.
机译:在散射理论的框架下,系统地研究了准一维(准1D)纳米线结构中局部限杂质中的杂质极限电阻和相位干扰的影响。我们从Landauer公式和玻利兹曼输运方程(BTE)得出弛豫时间近似值,得出线性响应机制下纳米线中杂质限制电阻的理论表达式。我们显示,当来自储层的传入电子的能谱较窄时,来自BTE的公式与具有弱散射极限的Landauer方法的公式完全吻合,因此指出了将由Landauer公式和BTE公式得出的杂质限制电阻可以明确。将所推导的公式应用于掺有具有短程散射电势的多个局部杂质的准一维纳米线,并讨论了电阻近似值的各种有效性。结果表明,在纳米线结构下,杂质的散射变得如此强烈,以至于在大多数情况下,弱散射极限都被破坏了。因此,即使在完全相干的框架下,相位干扰和相位随机化也同时在确定杂质限制电阻中起着至关重要的作用。当沿着线轴方向的杂质分离较小时,相长干涉占主导,并且电阻远大于平均电阻。但是,随着间隔变大,由于相位随机化,其接近单杂质电阻的串联电阻。此外,在杂质的均匀构型下,室温下多种杂质的空间平均电阻非常接近单杂质电阻的串联电阻,因此,每种杂质都可以视为独立的散射中心。在完全相干的环境下,这种“自平均”的物理起源归因于来自储层的传入电子的能谱范围。

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    Sano Nobuyuki;

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  • 年度 2015
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  • 原文格式 PDF
  • 正文语种 en
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