p(2×2) Phase of Buckled Dimers of Si(100) Observed on n-Type Substrates below 40 K by Scanning Tunneling Microscopy

摘要

We have investigated the basic surface reconstruction of Si(100) on well defined surfaces fabricated on various substrates at low temperatures (-80  K) by scanning tunneling microscopy. Below 40 K, the single p(2×2) phase, a phase never observed before, was observed exclusively on n-type substrates doped in the range of 0.002 to 0.017  Ω cm. We also exclude the possibility of the (2×1) symmetric dimer commonly observed at low temperature (-10  K) being the basic surface reconstruction by showing that a buckled dimer can be flip-flopped by the tunneling tip.