We study the effect of structural deformation on carrier accumulation in semiconducting carbon nanotubes (CNTs) under the external electric field, on the basis of the density functional theory combined with the effective screening medium method. The capacitances of the CNTs with ellipsoidal and squashed cross sections are different from that of the pristine CNT owing to the distribution of accumulated carriers depending on the CNT deformation and arrangements with respect to the electric field direction. The results suggest that the cross section and arrangement of deformed CNTs result in gate voltage variations for both electron and hole injection, causing the degradation of CNT-based field-effect electronic devices.
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