Investigation of grainboundaries in BaSi2epitaxialfilms on Si(1 1 1) substrates using transmissionelectronmicroscopy and electron-beam-induced current technique

摘要

a-Axis-oriented undoped n-BaSi2epitaxialfilms were grown on Si(111) substrates by molecular beam epitaxy, and the crystalline quality and grainboundaries were investigated by means of reflection high-energy electron diffraction, X-ray diffraction, and transmissionelectronmicroscopy (TEM). The grain size of the BaSi2films was estimated to be approximately 0.1–0.3 μm, and straight grainboundaries (GBs) were observed in the plan-view TEM images. Dark-field TEM images under a two-beam diffraction condition showed that these GBs consist mostly of BaSi2 {011} planes. The diffusion length of minority carriers in n-BaSi2 was found to be approximately 10 μm by an electron-beam-induced current technique.