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Multilevel RTS in proton irradiated CMOS image sensors manufactured in a deep submicron technology

机译:用深亚微米技术制造的质子辐照CMOS图像传感器中的多级RTS

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摘要

A new automated method able to detect multilevel random telegraph signals (RTS) in pixel arrays and to extract their main characteristics is presented. The proposed method is applied to several proton irradiated pixel arrays manufactured using a 0.18um CMOS process dedicated to imaging. Despite the large proton energy range and the large fluence range used, similar exponential RTS amplitude distributions are observed. A mean maximum amplitude independent of displacement damage dose is extracted from these distributions and the number of RTS defects appears to scale well with total nonionizing energy loss. These conclusions allow the prediction of RTS amplitude distributions. The effect of electric field on RTS amplitude is also studied and no significant relation between applied bias and RTS amplitude is observed.
机译:提出了一种新的自动方法,该方法能够检测像素阵列中的多级随机电报信号(RTS)并提取其主要特征。所提出的方法被应用于使用专用于成像的0.18um CMOS工艺制造的几个质子辐照像素阵列。尽管使用了较大的质子能量范围和较大的注量范围,但仍观察到相似的指数RTS振幅分布。从这些分布中提取出与位移破坏剂量无关的平均最大振幅,RTS缺陷的数量似乎随着总非电离能量损失而按比例缩放。这些结论可以预测RTS振幅分布。还研究了电场对RTS振幅的影响,并且未观察到施加的偏压与RTS振幅之间的显着关系。

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