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Characterization of sulfur distribution in Ni-based superalloy and thermal barrier coatings after high temperature oxidation: a SIMS analysis

机译:高温氧化后镍基高温合金和热障涂层中硫分布的特征:SIMS分析

摘要

Sulfur segregation was characterized by secondary ion mass spectrometry (SIMS) in uncoated single-crystal Ni-based AM1 superalloys with various S contents and on NiPtAl, NiAl and NiPt bondcoats of complete TBC systems. In spite of technical difficulties associated with diffuse sputtered interfaces, an original sample preparation technique and a careful choice of analysis conditions enabled a chemical characterization of S distribution below metal/oxide interfaces. An initial heterogeneous distribution of S in as-received high S (3.2 ppmw) AM1 was measured. After oxidation, a S depletion profile formed, with a slope that depended on the initial bulk S content. GDMS measurements enabled a quantitative distribution of S in oxidized low S (0.14 ppmw) AM1 to be constructed and discussed in relation to equilibrium surface segregation of S on Ni. The quantity of S integrated in the thermally grown oxide (TGO) was estimated and found to be very similar to that measured from depletion found in the metal. Localized S enrichments in Pt-containing coatings are related to a possible beneficial trapping mechanism of Pt on the adherence of oxide scales.
机译:硫的偏析通过二次离子质谱(SIMS)在具有不同S含量的未涂层单晶Ni基AM1超级合金中以及在完整的TBC系统的NiPtAl,NiAl和NiPt粘结涂层上进行表征。尽管存在与弥散溅射界面相关的技术难题,但原始的样品制备技术和精心选择的分析条件仍可对金属/氧化物界面下方的S分布进行化学表征。测量了在接收到的高S(3.2 ppmw)AM1中S的初始异质分布。氧化后,形成了S耗尽曲线,其斜率取决于初始本体S含量。 GDMS测量可以构建S在氧化的低S(0.14 ppmw)AM1中的定量分布,并讨论了S在Ni上的平衡表面偏析。估算了热生长氧化物(TGO)中所含的S量,该量与从金属中的耗尽所测得的量非常相似。含Pt涂层中的局部S富集与Pt附着在氧化皮上的可能的有益捕集机制有关。

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