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Total ionizing dose versus displacement damage dose induced dark current random telegraph signals in CMOS image sensors

机译：CMOS图像传感器中总电离剂量与位移破坏剂量的感应暗电流随机电报信号

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摘要

Dark current Random Telegraph Signals due to total ionizing dose (TID) and displacement damage dose (DDD) are investigated in CMOS image sensors. Discrepancies between both RTS are emphasised to better understand the microscopic origins of the phenomena.

机译：在CMOS图像传感器中研究了由于总电离剂量（TID）和位移破坏剂量（DDD）而产生的暗电流随机电报信号。强调两个RTS之间的差异以更好地理解现象的微观起源。

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Virmontois Cédric; Goiffon Vincent; Magnan Pierre; Saint-Pé Olivier; Girard Sylvain; Petit Sophie; Rolland Guy; Bardoux Alain;
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年度 2011
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原文格式 PDF
正文语种 {"code":"en","name":"English","id":9}
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专利

1. Total Ionizing Dose Versus Displacement Damage Dose Induced Dark Current Random Telegraph Signals in CMOS Image Sensors [J] . Virmontois C., Goiffon V., Magnan P., Nuclear Science, IEEE Transactions on . 2011,第6期

机译：CMOS图像传感器中总电离剂量与位移损伤剂量引起的暗电流随机电报信号
2. Phosphorus Versus Arsenic: Role of the Photodiode Doping Element in CMOS Image Sensor Radiation-Induced Dark Current and Random Telegraph Signal [J] . Alexandre Le Roch, Cédric Virmontois, Philippe Paillet, IEEE Transactions on Nuclear Science . 2020,第7期

机译：磷与砷：光电二极管掺杂元件在CMOS图像传感器辐射引起的暗电流和随机电报信号中的作用
3. Proton and -Rays Irradiation-Induced Dark Current Random Telegraph Signal in a 0.18- CMOS Image Sensor [J] . Martin E., Nuns T., Virmontois C., IEEE Transactions on Nuclear Science . 2014,第4aPart1期

机译：0.18- CMOS图像传感器中质子和射线辐照引起的暗电流随机电报信号
4. Influence of displacement damage dose on dark current distributions of irradiated CMOS image sensors [C] . Virmontois C., Goiffon V., Magnan P., 12th European Conference on Radiation and Its Effects on Components and Systems . 2011

机译：位移损伤剂量对辐照CMOS图像传感器暗电流分布的影响
5. Hierarchical simulation method for total ionizing dose radiation effects on CMOS mixed-signal circuits. [D] . Mikkola, Esko. 2008

机译：用于CMOS混合信号电路的总电离剂量辐射效应的分层仿真方法。
6. Leakage Current Non-Uniformity and Random Telegraph Signals in CMOS Image Sensor Floating Diffusions Used for In-Pixel Charge Storage [O] . Alexandre Le Roch, Vincent Goiffon, Olivier Marcelot, 2019

机译：泄漏电流非均匀性和随机电报信号在CMOS图像传感器浮动扩散中用于贴上像素的电荷存储器
7. Validation of a model for Dark Current Non Uniformity generated by Displacement Damage Dose in irradiated CMOS Image Sensors [O] . Belloir Jean-Marc, Goiffon Vincent, Magnan Pierre, 2014

机译：辐照CMOS图像传感器中位移损伤剂量产生的暗电流不均匀性模型的验证
8. Compendium of Current Total Ionizing Dose and Displacement Damage Results from NASA Goddard Space Flight Center and Selected NASA Electronic Parts and Packaging Program. [R] . Topper, A. D., Campola, M. J., O'Bryan, M. V., 2017

机译：美国宇航局戈达德太空飞行中心和Nasa电子零件和封装计划选定的当前总电离剂量和位移损坏汇编。

Total ionizing dose versus displacement damage dose induced dark current random telegraph signals in CMOS image sensors

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