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Wafer-level fabrication process for fully encapsulated micro-supercapacitors with high specific energy

机译:具有高比能的全封装微型超级电容器的晶圆级制造工艺

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摘要

In this paper a wafer-level process is proposed to fully integrate carbon-based micro-supercapacitor onto silicon substrate. This process relies on the deposition of a paste containing carbon, PVDF and acetone into cavities etched in silicon. After electrolyte deposition in a controlled atmosphere, a wafer-level encapsulation is realized. Cyclic voltammetry performed on non-encapsulated microcomponents showed specific energy of 257 mJ cm-2 for 336 lm deep cavities. The specific encapsulation process developed was tested separately and proved to be efficient in terms of resistance to organic electrolytes and mechanical strength.
机译:本文提出了一种晶圆级工艺,可将碳基微型超级电容器完全集成到硅衬底上。此过程依赖于将含碳,PVDF和丙酮的糊剂沉积到硅刻蚀的空腔中。在受控气氛中沉积电解质后,即可实现晶圆级封装。对未封装的微组件执行的循环伏安法显示,对于336 lm深的腔,比能为257 mJ cm-2。所开发的特定封装工艺经过单独测试,并被证明在抗有机电解质和机械强度方面是有效的。

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