Fabrication of (Ga,Mn)N nanowires with room temperature ferromagnetism using nitrogen plasma

摘要

Ferromagnetic properties of (Ga,Mn)N nanowires were examined by treating with nitrogen plasma at 200 °C. Nanowires grown by chemical vapor deposition were n-type and no secondary phases were found. The magnetic moment increased and was maintained at room temperature by this treatment. Synchrotron radiation photoemission spectroscopy revealed that Ga vacancies significantly increased, but N vacancies decreased by plasma treatment, leading to a decrease of MnGa-VN complex and the enhancement of Mn activation.