Quantum-dot light-emitting diodes utilizing CdSe/ZnS nanocrystals embedded in TiO(2) thin film

摘要

Quantum-dot (QD) light-emitting diodes (LEDs) are demonstrated on Si wafers by embedding core-shell CdSe/ZnS nanocrystals in TiO(2) thin films via plasma-enhanced metallorganic chemical vapor deposition. The n-TiO(2)/QDs/p-Si LED devices show typical p-n diode current-voltage and efficient electroluminescence characteristics, which are critically affected by the removal of QD surface ligands. The TiO(2)/QDs/Si system we presented can offer promising Si-based optoelectronic and electronic device applications utilizing numerous nanocrystals synthesized by colloidal solution chemistry.