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Investigation and Improvement of 90 degrees Direct Bends of Metal-Insulator-Silicon-Insulator-Metal Waveguides

机译:金属-绝缘子-硅-绝缘子-金属波导90度直接弯曲的研究与改进

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摘要

We investigate 90\circ direct bends of metal-insulator-silicon- insulator-metal (MISIM) waveguides, which are hybrid plasmonic waveguides with replaceable insulators. First, we fabricate them using fully standard CMOS technology and characterize them. The experimental excess loss of the two consecutive 90circ direct bends is 11, 7.4, and 4.5 dB when the width of the Si line of the MISIM waveguide is about 160, 190, and 220 nm, respectively. Second, we analyze the experimental results using the 3-D finite-difference time-domain method. Through the analysis, we investigate possible loss mechanisms of the 90 circ direct bend, which have not been studied to our knowledge. It has been found that the Si lines should be narrow to reduce the excess losses of the 90 circ direct bends. However, the wide Si lines are better for ease of fabrication and for small propagation losses. Finally, we demonstrate a modified low-loss 90 circ direct bend of the MISIM waveguide with a wide Si line.
机译:我们研究金属-绝缘体-硅-绝缘体-金属(MISIM)波导的90圈直接弯曲,它是具有可替换绝缘体的混合等离子体激元波导。首先,我们使用完全标准的CMOS技术制造它们并对其进行表征。当MISIM波导的Si线的宽度分别约为160、190和220 nm时,两个连续的90圈直接弯曲的实验过量损耗分别为11、7.4和4.5 dB。其次,我们使用3-D时域有限差分法分析实验结果。通过分析,我们调查了90圈直弯的可能的损失机制,而据我们所知尚未研究。已经发现,Si线应较窄以减少90圈直接弯曲的额外损失。但是,较宽的Si线更易于制造且传播损耗较小。最后,我们展示了具有宽Si线的MISIM波导的改进的低损耗90 circ直接弯曲。

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