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Effects of surface ligands on the charge memory characteristics of CdSe/ZnS nanocrystals in TiO2 thin film

机译:表面配体对TiO2薄膜中CdSe / ZnS纳米晶体电荷存储特性的影响

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摘要

harge memory characteristics have been systematically studied based on colloidal CdSe/ZnS nanocrystal quantum dots (QDs) embedded in similar to 50 nm-thick TiO2 film. Ligand-capped QDs showed negligible electron charging effect, implying that the electron affinity of QDs was significantly decreased by surface dipole layer surrounding QDs. In contrast, the hole charging was affected by the carrier injection blocking effect of the surface ligands. Efficient electron and hole charging characteristics were realized by removing the surface ligands via H-2 plasma treatment.
机译:基于嵌入在类似于50 nm厚度的TiO2薄膜中的CdSe / ZnS纳米胶体量子点(QDs),已经系统地研究了其记忆特性。配体封端的量子点显示的电子电荷效应可忽略不计,这表明量子点周围的表面偶极子层大大降低了量子点的电子亲和力。相反,空穴电荷受表面配体的载流子注入阻挡作用影响。通过H-2等离子体处理除去表面配体,可实现有效的电子和空穴充电特性。

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