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On the phase formation of sputtered hafnium oxide and oxynitride films

机译:溅射氧化ha和氮氧化物薄膜的相形成

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摘要

Hafnium oxynitride films are deposited from a Hf target employing direct current magnetron sputtering in an Ar-O(2)-N(2) atmosphere. It is shown that the presence of N(2) allows for the stabilization of the transition zone between the metallic and the compound sputtering mode enabling deposition of films at well defined conditions of target coverage by varying the O(2) partial pressure. Plasma analysis reveals that this experimental strategy facilitates control over the flux of the O(-) ions which are generated on the oxidized target surface and accelerated by the negative target potential toward the growing film. An arrangement that enables film growth without O(-) ion bombardment is also implemented. Moreover, stabilization of the transition sputtering zone and control of the O(-) ion flux without N(2) addition is achieved employing high power pulsed magnetron sputtering. Structural characterization of the deposited films unambiguously proves that the phase formation of hafnium oxide and hafnium oxynitride films with the crystal structure of HfO(2) is independent from the O(-) bombardment conditions. Experimental and theoretical data indicate that the presence of vacancies and/or the substitution of O by N atoms in the nonmetal sublattice favor the formation of the cubic and/or the tetragonal HfO(2) crystal structure at the expense of the monoclinic HfO(2) one.
机译:在Ar-O(2)-N(2)气氛中,采用直流磁控溅射从from靶沉积氮氧化薄膜。结果表明,N(2)的存在可以稳定金属和化合物溅射模式之间的过渡区域,从而可以通过改变O(2)的分压在确定的目标覆盖率条件下沉积薄膜。等离子体分析表明,该实验策略有助于控制O(-)离子的通量,该O(-)离子在氧化的目标表面上生成并被负目标电势朝着生长的膜加速。还实现了能够在不进行O(-)离子轰击的情况下使膜生长的布置。此外,使用高功率脉冲磁控溅射可以实现过渡溅射区的稳定和不添加N(2)的O(-)离子通量的控制。沉积膜的结构表征明确证明,具有HfO(2)晶体结构的氧化ha和氧氮化ha膜的相形成与O(-)轰击条件无关。实验和理论数据表明,非金属亚晶格中空位的存在和/或O被N原子取代有利于形成立方和/或四方的HfO(2)晶体结构,但以单斜晶HfO(2)为代价)一。

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