Comprehensive Evaluation and Study of Pattern Dependency Behavior in Selective Epitaxial Growth of B-Doped SiGe Layers

摘要

The influence of chip layout and architecture on thepattern dependency of selective epitaxy of B-doped SiGe layers hasbeen studied. The variations of Ge-, B-content, and growth ratehave been investigated locally within a wafer and globally fromwafer to wafer. The results are described by the gas depletion theory.Methods to control the variation of layer profile are suggested.