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Strained Multiple - Gate Transistors With Si/SiC and Si/SiGe Heterojunctions

机译：具有Si / SiC和Si / SiGe异质结的应变多栅极晶体管

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LIOW TSUNG-YANG;
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1. Nanoscale Strained Si/SiGe Heterojunction Trigate Field Effect Transistors [J] . Shu-Tong CHANG Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2005,第7A期

机译：纳米级应变Si / SiGe异质结三栅场效应晶体管
2. Low-Capacitance Low-Voltage Transient Voltage Suppressor Using Diode-Activated SiGe Heterojunction Bipolar Transistor in SiGe Heterojunction Bipolar Transistor Bipolar Complementary Metal-Oxide-Semiconductor Process [J] . Sheng-Huei Dai, Jeng-Jie Peng, Chia-Cheng Chen, Japanese journal of applied physics . 2009,第4issue2期

机译：SiGe异质结双极晶体管双极互补金属氧化物半导体工艺中使用二极管激活的SiGe异质结双极晶体管的低电容低电压瞬态电压抑制器
3. Enhanced performance virtual substrate heterojunction bipolar transistor using strained-Si/SiGe emitter [J] . N D Jankovic, A ONeill Semiconductor science and technology . 2003,第9期

机译：使用应变Si / SiGe发射极的增强性能虚拟衬底异质结双极晶体管
4. A Strained Si/SiGe Heterojunction Bipolar Transistor with Thin Si3N4 Film Fabricated on SOI Substrate [C] . Peipei Liu, Jianhao Wen, Hanwen Zhang, International Conference on Information Science, Computer Technology and Transportation . 2020

机译：具有在SOI衬底上制造的具有薄Si3N4膜的紧张Si / SiGe异质结双极晶体管
5. Investigation of carbon profiles for enhanced boron confinement and improved carrier transport in strained silicon germanium nanolayers for heterojunction bipolar transistors. [D] . Enicks, Darwin Gene. 2007

机译：在异质结双极晶体管的应变硅锗纳米层中研究碳分布，以增强硼的含量并改善载流子的传输。
6. Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors [O] . Guilei Wang, Jun Luo, Changliang Qin, 2017

机译：用于22nm体PMOS晶体管的HK和MG集成了源极和漏极中的高应变SiGe
7. Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors [O] . Kao Kuo-Hsing, Verhulst Anne, Rooyackers Rita, 2014

机译：基于p-i-n二极管的压缩应变SiGe带间隧穿模型校准及应变SiGe隧穿场效应晶体管的前景
8. Long-Wavelength Stacked SiGe/Si Heterojunction Internal Photoemission Infrared Detectors Using Multiple SiGe/Si Layers [R] . Park, J. S., Lin, T. L., Jones, E. W., 1994

机译：使用多个siGe / si层的长波长堆叠siGe / si异质结内部光电发射红外探测器

Strained Multiple - Gate Transistors With Si/SiC and Si/SiGe Heterojunctions

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