首页> 外文OA文献 >THEORETICAL STUDY OF ADVANCED FIELD-EFFECT TRANSISTORS BASED ON ALTERNATIVE CHANNEL MATERIALS FOR SUPPLY VOLTAGE REDUCTION

【2h】

THEORETICAL STUDY OF ADVANCED FIELD-EFFECT TRANSISTORS BASED ON ALTERNATIVE CHANNEL MATERIALS FOR SUPPLY VOLTAGE REDUCTION

机译：基于交替通道材料的先进场效应晶体管降压的理论研究

页面导航

著录项
相似文献
相关主题

著录项

作者
LOW KAIN LU;
展开▼
作者单位

展开▼
年度 2015
总页数
原文格式 PDF
正文语种 en
中图分类

相似文献

外文文献
中文文献
专利

1. High-frequency level-up shifter based on 0.18 mu m vertical metal-oxide-semiconductor field-effect transistors with 70% reduction of overshoot voltage above power supply voltage [J] . Tanoi Satoru, Endoh Tetsuo Japanese journal of applied physics . 2015,第4s期

机译：基于0.18μm垂直金属氧化物半导体场效应晶体管的高频升压转换器，其过冲电压比电源电压低70％
2. Impact of Mobility Degradation and Supply Voltage on Negative-Bias Temperature Instability in Advanced p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors [J] . Jone F. Chen, Dao-Hong Yang, Chih-Yung Lin, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2007,第4B期

机译：迁移率降低和电源电压对高级p沟道金属氧化物半导体场效应晶体管的负偏压温度不稳定性的影响
3. Gate dielectric material dependence of current-voltage characteristics of ballistic Schottky barrier graphene nanoribbon field-effect transistor and carbon nanotube field-effect transistor for different channel lengths [J] . Ahmed Sheikh, Shawkat Mashiyat, Chowdhury Md. Iramul, Micro & Nano Letters, IET . 2015,第10期

机译：栅介电材料对不同沟道长度的弹道肖特基势垒石墨烯纳米带场效应晶体管和碳纳米管场效应晶体管电流-电压特性的依赖性
4. Voltage scalability of double-gate ultra-thin-body field-effect transistors with channel materials from group IV, III-V to 2D-materials based on ITRS metrics for year 2018 and beyond [C] . Low Kain Lu, Yeo Yee-Chia, Liang Gengchiau Annual Device Research Conference . 2014

机译：基于ITRS指标的2018年及以后的双栅超薄型场效应晶体管的电压可扩展性，其沟道材料从IV，III-V组到2D材料
5. Theoretical study of advanced fieldeffect transistors based on alternative channel materials for supply voltage reduction. [D] . Lu, Low Kain. 2015

机译：基于替代沟道材料以降低电源电压的先进场效应晶体管的理论研究。
6. Effects of Dielectric Material HMDS Layer and ChannelLength on the Performance of the Perylenediimide-Based Organic Field-Effect Transistors [O] . Suresh Vasimalla, Nimmakayala V.V. Subbarao, Murali Gedda, 2017

机译：介电材料HMDS层和通道的影响基于ylene二酰亚胺的有机场效应晶体管的性能长度
7. Advanced Transistors for Supply Voltage Reduction: Tunneling Field-Effect Transistors and High-Mobility MOSFETS [O] . GUO PENGFEI 2013

机译：用于降低电源电压的先进晶体管：隧穿场效应晶体管和高迁移率MOSFET
8. The Current-Voltage Characteristics of Field-Effect Transistors with Short Channels. [R] . Hess, K., Dorda, G., Sah, C. T. 1975

机译：短沟道场效应晶体管的电流 - 电压特性。

THEORETICAL STUDY OF ADVANCED FIELD-EFFECT TRANSISTORS BASED ON ALTERNATIVE CHANNEL MATERIALS FOR SUPPLY VOLTAGE REDUCTION

著录项

相似文献

相关主题

期刊订阅