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Adaptation and Application of A State-Of-The-Art Impedance analyzer for Characterization of Silicon P-I-N Diodes

机译：表征硅P-I-N二极管的最新阻抗分析仪的改编和应用

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PANJI GAZALI ILHAM SURYACANDRA;
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年度 2011
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正文语种 en
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1. A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications [J] . Elasser A., Kheraluwala M.H., Ghezzo M., IEEE Transactions on Industry Applications . 2003,第4期

机译：对用于电力电子应用的新型碳化硅二极管和最先进的硅二极管的比较评估
2. Adaptation of the charge pumping technique to gated p-i-n diodes fabricated on silicon on insulator [J] . Ouisse T., Cristoloveanu S. IEEE Transactions on Electron Devices . 1991,第6期

机译：电荷泵技术适用于绝缘体上硅上制造的门控p-i-n二极管
3. Characterization of Lateral Structure of the p-i-n Diode for Thin-Film Silicon Solar Cell [J] . Kiaee Zohreh, Joo Seung Ki Journal of nanoscience and nanotechnology . 2018,第3期

机译：薄膜硅太阳能电池P-I-N二极管横向结构的表征
4. A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications [C] . Elasser, A., Kheraluwala, Industry Applications Conference, 1999. Thirty-Fourth IAS Annual Meeting. Conference Record of the 1999 IEEE . 1999

机译：对用于电力电子应用的新型碳化硅二极管和最先进的硅二极管的比较评估
5. Characterization of silicon carbide power semiconductor Schottky diodes and JFETs for high-switching frequency applications. [D] . Abou-alfotouh, Ahmed Mohamed. 2004

机译：用于高开关频率应用的碳化硅功率半导体肖特基二极管和JFET的特性。
6. Customisable X-ray fluorescence photodetector with submicron sensitivity using a ring array of silicon p-i-n diodes [O] . Phil S. Yoon -1

机译：使用硅p-i-n二极管的环形阵列可定制的具有亚微米灵敏度的X射线荧光光电探测器
7. Non-contacting displacement transducer and its application to dental research - Electro-optical displacement transducer applied in first time in dental research and displacement transducer developed by using a quadrant silicon p-i-n photodiode and a high output infrared light emitting diode. [O] . Takao Mizokami, Tomoaki Nanami, Kaoru Sakurai, 1984

机译：通过使用象限硅P-I-N光电二极管和高输出红外发光二极管开发的牙科研究和位移传感器中首次应用于牙科研究 - 电光位移换能器的牙科研究 - 电光位移换能器。

Adaptation and Application of A State-Of-The-Art Impedance analyzer for Characterization of Silicon P-I-N Diodes

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