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Investigation of high-K dielectric films incorporated with Lanthanum and their application in flash memory devices

机译：掺镧的高K介电薄膜及其在闪存设备中的应用研究

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1. Effects of forming gas annealing on the memory characteristics of Ge nanocrystals embedded in LaAiO(3) high-k dielectrics for flash memory device application [J] . Lu XB, Lee PF, Dai JY Thin Solid Films . 2006,第1a2期

机译：形成气体退火对嵌入LaAiO（3）高k电介质中的Ge纳米晶体存储特性的影响
2. Data Retention Characteristics of Nitride-Based Charge Trap Memory Devices with High-k Dielectrics and High-Work-Function Metal Gates for Multi-Gigabit Flash Memory [J] . Jang-Sik Lee, Chang-Seok Kang, Yoo-Cheol Shin, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第4B期

机译：具有高k电介质和高功函数金属门的基于氮化物的电荷陷阱存储器件的数据保留特性，用于多千兆位闪存
3. Bilayer of zirconium oxide/lanthanum oxide high-K dielectric fabricated for metal-oxide-semiconductor nano-electronic device applications [J] . Mangla Onkar, Roy Savita Materials Letters . 2021,第Octa15期

机译：用于金属氧化物半导体纳米电子器件应用的氧化锆/镧氧化物高k电介质的双层。
4. Study of Lanthanum incorporated HfO_2 nano-scale high-K dielectric using Dense Plasma Focus for metal-insulator-metal capacitor applications [C] . A. Srivastava, Y. Malhotra Recent researches in telecommunications, informatics, electronics and signal processing . 2011

机译：密集等离子体聚焦法研究镧掺入的HfO_2纳米级高K电介质在金属-绝缘体-金属电容器中的应用
5. Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications. [D] . Jayanti, Srikant. 2012

机译：用于非易失性存储器应用的高k电介质和金属栅电极的研究。
6. Atomic force microscopy data of novel high-k hydrocarbon films synthesized on Si wafers for gate dielectric applications [O] . Jihwan Kwon, Dong-Ok Kim, Sangyeob Lee, 2020

机译：在硅晶片上合成的用于栅极电介质应用的新型高k碳氢化合物薄膜的原子力显微镜数据
7. Effects of forming gas annealing on the memory characteristics of Ge nanocrystals embedded in LaAlO3 high-k dielectrics for flash memory device application [O] . Lu XB, Lee PF, Dai JY 2006

机译：形成气体退火对嵌入LaAlO3高k电介质中的Ge纳米晶体存储特性的影响
8. In the Matter of Certain EPROM, EEPROM, Flash Memory, and Flash Microcontroller211 Semiconductor Devices, and Products Containing Same. Investigation No. 337-TA-395 [R] . 1998

机译：在某些EpROm，EEpROm，闪存和闪存微控制器211半导体器件以及包含它的产品中。调查编号337-Ta-395

Investigation of high-K dielectric films incorporated with Lanthanum and their application in flash memory devices

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