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Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices

机译：基于（Ga，Mn）As和（Ga，Be）As的电场效应器件中空穴累积和耗尽层的红外电导率

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Chapler B. C.; Mack S.; Ju L.; Elson T. W.; Boudouris B. W.; Namdas E.; Yuen J. D.; Heeger A. J.; Samarth N.; Di Ventra M.; Segalman R. A.; Awschalom D. D.; Wang F.; Basov D. N.;
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年度 2012
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1. Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices [J] . B. C. Chapter, S. Mack, L. Ju, Physical review . 2012,第16期

机译：基于（Ga，Mn）As和（Ga，Be）As的电场效应器件中空穴累积和耗尽层的红外电导率
2. Organic Field-Effect Transistor for Energy-Related Applications: Low-Power-Consumption Devices, Near-Infrared Phototransistors, and Organic Thermoelectric Devices [J] . Ren Xiaochen, Yang Fangxu, Gao Xiong, Advanced energy materials . 2018,第24期

机译：能源相关应用的有机场效应晶体管：低功耗器件，近红外光电晶体管和有机热电器件
3. The effect of porous structure of PMMA tunneling dielectric layer on the performance of nonvolatile floating-gate organic field-effect transistor memory devices [J] . Mingdong Yi, Jingkun Shu, Yizheng Wang, Organic Electronics . 2016,第Juna期

机译：PMMA隧穿介电层的多孔结构对非易失性浮栅有机场效应晶体管存储器件性能的影响
4. Depletion and Accumulation Mode Operation of GaAs MISFETs with nm-Thin Gate Insulating Layers Formed by UV Ozone process [C] . Y. Kita, Y. Ohta, N. C. Paul, International symposium on compound semiconductor . 2002

机译：通过UV和臭氧过程形成GaAs MISFET的耗尽和累积模式操作
5. I. Hole-transporting dendrimers and their use in organic light-emitting devices (OLEDs) and II. Novel layered catalysts containing bipyridinium and zero-valent metal species. [D] . Koene, Shannon Carol. 1999

机译：I.空穴传输树状聚合物及其在有机发光器件（OLED）和II中的用途。含有联吡啶和零价金属物质的新型层状催化剂。
6. Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility [O] . J. A. Caraveo-Frescas, M. A. Khan, H. N. Alshareef -1

机译：具有SnO沟道层的聚合物铁电场效应存储器件具有记录空穴迁移率
7. Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices [O] . Chapler, B. C., Mack, S., Ju, L., 2012

机译：空穴累积和耗尽层的红外电导率（Ga，mn）as-和（Ga，Be）as基电场效应器件

Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices

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