Evaluation Of Elastic Modulus And Stress Gradient Of PECVD Silicon Nitride Thin Films

摘要

This study investigated the techniques for determining the elastic modulus and estimating the stress gradient of plasma-enhanced chemical vapor deposition (PECVD) silicon nitride thin films. The experimentally determined elastic modulus was then used in a finite element beam model to compute the stress distribution inside the thin films using a commercial finite element analysis package. The computed beam displacement caused by a given stress gradient was compared with the displacement experimentally evaluated using optical interference microscopy. This comparison allows the stress gradient of the PECVD silicon nitride membrane introduced by the fabrication process to be evaluated.