首页> 外文OA文献 >Novel high-index resists for 193nm immersion lithography and beyond
【2h】

Novel high-index resists for 193nm immersion lithography and beyond

机译:新型高折射率抗蚀剂,适用于193nm浸没式光刻及其他工艺

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

A preliminary Quantitative Structure Property Relationship (QSPR) model for predicting the refractive index of small molecules and polymers at 193 nm is presented. Although at this stage the model is only semiquantitative we have found it useful for screening databases of commercially-available compounds for high refractive index targets to include in our program of synthesis of high refractive index resist polymers. These resists are targeted for use in 2nd and 3rd generation 193 nm immersion lithography. Using this methodology a range of targets were identified and synthesized via free radical polymerization. Novel resist polymers were also synthesized via Michael addition polymerization. Preliminary dose to clear experiments identified a number of promising candidates for incorporation into high refractive index resist materials. Furthermore, we have demonstrated imaging of a high index resist using water-based 193 nm immersion lithography.
机译:提出了初步的定量结构性质关系(QSPR)模型,用于预测小分子和聚合物在193 nm处的折射率。尽管在此阶段该模型仅是半定量的,但我们发现该模型可用于筛选可用于高折射率目标物的市售化合物数据库,以将其包含在我们的高折射率抗蚀剂聚合物合成程序中。这些抗蚀剂的目标是用于第二代和第三代193 nm浸没式光刻。使用这种方法,可以通过自由基聚合确定并合成一系列靶标。还通过迈克尔加成聚合反应合成了新型抗蚀剂聚合物。清除剂量的初步剂量确定了许多有前途的候选物,可以掺入高折射率抗蚀剂材料中。此外,我们已经证明了使用水基193 nm浸没式光刻技术对高折射率抗蚀剂成像。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号