首页> 外文OA文献 >Polarization-insensitive optical gain characteristics of highly stacked InAs/GaAs quantum dots

【2h】

Polarization-insensitive optical gain characteristics of highly stacked InAs/GaAs quantum dots

机译：高度堆叠的InAs / GaAs量子点的偏振不敏感光学增益特性

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Kita Takashi; Suwa Masaya; Kaizu Toshiyuki; Harada Yukihiro;
展开▼
作者单位

展开▼
年度 2014
总页数
原文格式 PDF
正文语种 eng
中图分类

相似文献

外文文献
中文文献
专利

1. Polarization-insensitive fiber-to-fiber gain of semiconductor optical amplifier using closely stacked InAs/GaAs quantum dots [J] . Kaizu Toshiyuki, Kakutani Tomoya, Akahane Kouichi, Japanese journal of applied physics . 2020,第3期

机译：使用紧密堆叠的INAS / GaAs量子点的半导体光放大器的极化不敏感光纤增益
2. Polarization characteristics of electroluminescence and net modal gain in highly stacked InAs/GaAs quantum-dot laser devices [J] . Masaya Suwa, Takaya Andachi, Toshiyuki Kaizu, Journal of Applied Physics . 2016,第13期

机译：高度堆叠的InAs / GaAs量子点激光器件中电致发光的偏振特性和净模态增益
3. Gain characteristics of InAs/InGaAsP quantum dot semiconductor optical amplifiers at 1.5 μm [J] . N. J. Kim, J. M. Oh, M. D. Kim, Applied Physics Letters . 2007,第24期

机译：InAs / InGaAsP量子点半导体光放大器在1.5μm处的增益特性
4. Polarization anisotropy of electroluminescence and net-modal gain in highly stacked InAs/GaAs quantum-dot laser devices [C] . Toshiyuki Kaizu, Masaya Suwa, Takaya Andachi, 2016 Compound Semiconductor Week Includes 28th International Conference on Indium Phosphide amp; Related Materials amp; 43rd International Symposium on Compound Semiconductors . 2016

机译：高度堆叠的InAs / GaAs量子点激光器件中电致发光的偏振各向异性和净模态增益
5. Optical and Mechanical Investigation of InAs /GaAs Quantum Dots Solar Cells and InAs Nanowires for the Application of Photovoltaic Device. [D] . Dai, Yushuai. 2013

机译：InAs / GaAs量子点太阳能电池和InAs纳米线在光伏器件中的应用的光学和机械研究。
6. Tunable Emission Wavelength Stacked InAs/GaAs Quantum Dots by Chemical Beam Epitaxy for Optical Coherence Tomography [O] . Bouraoui Ilahi, Jihene Zribi, Maxime Guillotte, 2016

机译：通过化学束外延法对InAs / GaAs量子点可调的发射波长进行光学相干层析成像
7. Polarization characteristics of electroluminescence and net modal gain in highly stacked InAs/GaAs quantum-dot laser devices [O] . Suwa Masaya, Andachi Takaya, Kaizu Toshiyuki, 2016

机译：高度堆叠的InAs / GaAs量子点激光器件中电致发光的偏振特性和净模态增益

Polarization-insensitive optical gain characteristics of highly stacked InAs/GaAs quantum dots

著录项

引文网络

相似文献

相关主题

期刊订阅