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Enhancement of ballistic efficiency due to source to channel heterojunction barrier in Si metal oxide semiconductor field effect transistors

机译：Si金属氧化物半导体场效应晶体管中源到沟道异质结势垒导致的弹道效率提高

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Wang Wei; Tsuchiya Hideaki; Ogawa Matsuto;
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年度 2009
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1. Enhancement of ballistic efficiency due to source to channel heterojunction barrier in Si metal oxide semiconductor field effect transistors [J] . W. Wang, H. Tsuchiya, M. Ogawa Journal of Applied Physics . 2009,第2期

机译：Si金属氧化物半导体场效应晶体管中源到沟道异质结势垒导致的弹道效率提高
2. New Source Heterojunction Structures with Relaxed/Strained Semiconductors for Quasi-Ballistic Complementary Metal-Oxide-Semiconductor Transistors: Relaxation Technique of Strained Substrates and Design of Sub-10nm Devices [J] . Tomohisa Mizuno, Naoki Mizoguchi, Kotaro Tanimoto, Japanese journal of applied physics . 2010,第4issue2期

机译：用于准弹道互补金属氧化物半导体晶体管的具有松弛/应变半导体的新源异质结结构：应变衬底的松弛技术和10nm以下器件的设计
3. Physical Origin of Drive Current Enhancement in Uttrathin Ge-on-lnsulator n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors under Full Ballistic Transport [J] . Shinichi Takagi, Mitsuru Takenaka Japanese journal of applied physics.Part 1.Regular papers & short notes . 2011,第1ISSUE1期

机译：全弹道输运下超薄绝缘体上的Ge沟道n沟道金属氧化物半导体场效应晶体管驱动电流增强的物理原因
4. Performance enhancement of AlGaN/GaN metal-oxide-semiconductor heterojunction field-effect transistor (MOSHFET) with atomic layer deposition (ALD) of high-k HfAlO gate dielectric layer [C] . Lee Bongmook, Choi Young-Hwan, Kirkpatrick Casey, 2011 International Semiconductor Device Research Symposium . 2011

机译：高k HfAlO栅极介电层的原子层沉积（ALD）功能增强了AlGaN / GaN金属氧化物半导体异质结场效应晶体管（MOSHFET）的性能
5. Compact Modeling of Ballistic Monolayer Black Phosphorus Metal-Oxide-Semiconductor Field-Effect Transistors [D] . Prentki, Rapha?l Joachim. 2017

机译：弹道单层黑色磷金属氧化物半导体场效应晶体管的紧凑型造型
6. Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics [O] . Tsubasa Matsumoto, Hiromitsu Kato, Kazuhiro Oyama, -1

机译：具有常关特性的反相沟道金刚石金属氧化物半导体场效应晶体管
7. The channel mobility degradation in a nanoscale metal-oxide-semiconductor field effect transistor due to injection from the ballistic contacts [O] . Arora Vijay Kumar, A. Riyadi Munawar 2011

机译：由于弹道接触而注入的纳米级金属氧化物半导体场效应晶体管中的沟道迁移率下降
8. Gamma, electron, and proton radiation exposures of P-channel, enhancement, metal oxide semiconductor, field effect transistors [R] . Wannemacher, H. E. 1965

机译：G沟道，电子辐射和质子辐射暴露于p沟道，增强，金属氧化物半导体，场效应晶体管

Enhancement of ballistic efficiency due to source to channel heterojunction barrier in Si metal oxide semiconductor field effect transistors

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