In this paper, the design, fabrication, and test of highefficiency,\udhigh-power C-band harmonic-tuned power amplifiers\udin GaN technology is reported. The amplifier has been designed utilizing\udsecond-harmonic tuning for high-efficiency operation, thus\udexploiting the high-breakdown voltage peculiarity of GaN-based\uddevices. Realized in a hybrid form, the amplifier has been characterized\udin terms of small-signal, power, and intermodulation (IMD)\udperformance. An operating bandwidth over 20% around 5.5 GHz,\udwith 33-dBm minimum output power, and 60% drain efficiency at\udcenter frequency is demonstrated, together with low IMD.
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