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Dosimetry of very high energy electronsud(VHEE) for radiotherapy applications: usingudradiochromic film measurements andudMonte Carlo simulations

机译:高能电子的剂量法 ud(VHEE)用于放疗应用:使用 ud放射变色膜的测量和蒙特卡洛模拟

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摘要

Very high energy electrons (VHEE) in the range from 100–250 MeV haveudthe potential of becoming an alternative modality in radiotherapy becauseudof their improved dosimetry properties compared with MV photons fromudcontemporary medical linear accelerators. Due to the need for accurateuddosimetry of small field size VHEE beams we have performed doseudmeasurements using EBT2 Gafchromic® film. Calibration of the film has been carried out for beams of two different energy ranges: 20 MeV and 165 MeVudfrom conventional radio frequency linear accelerators. In addition, EBT2 filmudhas been used for dose measurements with 135 MeV electron beams producedudby a laser-plasma wakefield accelerator. The dose response measurements andudpercentage depth dose profiles have been compared with calculations carriedudout using the general-purpose FLUKA Monte Carlo (MC) radiation transportudcode. The impact of induced radioactivity on film response for VHEEs hasudbeen evaluated using the MC simulations. A neutron yield of the order ofud10−5 neutrons cm−2 per incident electron has been estimated and inducedudactivity due to radionuclide production is found to have a negligible effect onudtotal dose deposition and film response. Neutron and proton contribution to theudequivalent doses are negligible for VHEE. The study demonstrates that EBT2udGafchromic film is a reliable dosimeter that can be used for dosimetry ofudVHEE. The results indicate an energy-independent response of the dosimeterudfor 20 MeV and 165 MeV electron beams and has been found to be suitableudfor dosimetry of VHEE.
机译:100至250 MeV范围内的超高能量电子(VHEE)具有成为放射治疗替代模式的潜力,因为与来自现代医学线性加速器的MV光子相比,其更高的剂量学特性。由于需要对小视场尺寸的VHEE光束进行精确的剂量测定,我们已经使用EBT2Gafchromic®薄膜进行了剂量测度。膜的校准已经针对两种不同能量范围的光束进行了校准:常规射频线性加速器的20 MeV和165 MeV ud。此外,EBT2膜已用于通过激光等离子尾波加速器产生的135 MeV电子束进行剂量测量。已将剂量响应测量值和//深度百分比剂量分布图与使用通用FLUKA蒙特卡洛(MC)辐射传输/ udcode进行的计算进行了比较。使用MC模拟已经评估了VHEE的放射性对薄膜响应的影响。估计每个入射电子的中子产率约为 ud10-5中子cm-2,并且发现由于放射性核素的产生而引起的 udactivity对 utotal剂量沉积和薄膜响应的影响可忽略不计。对于VHEE,中子和质子对等效剂量的贡献可以忽略不计。研究表明,EBT2 udGafchromic薄膜是一种可靠的剂量计,可用于 udVHEE的剂量测定。结果表明,对于20 MeV和165 MeV电子束,剂量仪的能量依赖性响应 ud,并且已发现适合VHEE的剂量法。

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