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Fundamental studies of structure and crystallinity of low and high molecular weight poly(3-hexylthiophene) P3HT by means of synchrotron X-ray diffraction

机译:低和高分子量聚(3-己基噻吩)P3HT的结构和结晶度的基础研究,采用同步加速器X射线衍射

摘要

Conjugated polymers are the one of the most promising candidates for the active layer of low-cost Organic-field-effect transistors (OFETs). The charge carrier mobility of these conjugated polymers is the key material property, limiting the performance of the devices. The structural ordering along the whole thickness of film, especially near to interface region play an important role of controlling such electrical properties which ultimately gives high device performance. In the present work using complementary techniques I have studied structural properties of P3HT films as a function of molecular weight and film thickness. Detailed structural studies have been done to understand this polythiophene families internal structural ordering and consequently its correlation with charge carrier mobility. This work focussed on the dependence of the charge transport on morphology of the best known polythiophene group member i.e. regioregular poly(3-hexylthiophene). P3HT films (thin as well as bulk) with different molecular weights provided an ideal system for correlating morphological changes in conjugated polymers to resulting changes in charge transport seeing that the charge carrier mobility in OFETs was found to increase up to four orders-of-magnitude as the molecular weight (Mw) of P3HT is increased from 2500 g/mol to 30,000 g/mol. Grazing incidence X-ray scattering (GIXS) with combination of its complementary techniques like Atomic Force Microscopy (AFM) and Transmission Electron Microscopy (TEM) were used to measure changes in the crystallinity and crystal orientation associated with varying the annealing conditions, substrate surface treatment at a constant Mw. In particular, X-ray grazing-incidence diffraction (GID) used for depth-resolved structural analysis. We have noticed the several diffraction peaks which are associated with crystalline ordering within the films for low as well as HMW fractions (LMW, HMW) of P3HT besides the amorphous scattering from disordered part of the polymer sample. Both molecular weight fractions display a well pronounced periodicity normal to the surface due to stacking of main chains. The inter-planar distances for such stacked sheets were found to be 1.5 and 1.6 nm for low and high molecular weight fractions, respectively. These films are formally amorphous having the crystalline domains dispersed in amorphous matrix. Here, a textured and strong orientation effects are observed. On the other hand, for the low molecular weight fraction, the X-ray diffraction data are different at the surface and for the bulk samples, where the CCD images show a randomly orientated powder without any preferential orientation of nanocrystallites.Our results for LMW P3HT indicate the overall higher crystallinity, better in-plane stacking and the concentration of highly oriented crystals, but the mobility is more than a factor of 100 lower than HMW P3HT. These counterintuitive results indicate the charge carrier mobility of conjugated polymers is coupled to several different aspects of the morphology. In the case of the LMW films, the ordered regions are embedded in amorphous matrix which isolates the crystallites from their next neighbours. Whereas in HMW films, the long chains connect the small ordered regions and provide a smooth pathway for charges to move through the film. The molecular structure and morphology of an organic semiconductor are important key factors which control the properties of the interface between the organic film and the insulator, thus a part of research has also focused on interface engineering. We have modified the interface layer interaction by varying the dielectric layers (HMDS, OTS). Our GIXS results on samples with a chemically modified surface showed highly oriented crystals that were nucleated from the substrate and correlate with variations in charge transport for the first 5-10 layers. Correlation between the structural, thermal properties with the OFET performance gives strong evidence that the transport properties of layers prepared from both fractions of poly(3-hexylthiophene) is largely determined by the crystallinity of the samples and in part, responsible for the strong dependence of the OFET mobilities for polymer OFETs on the preparation conditions. Regarding the comparison of electronic and structural properties for HMW fraction, we have found that the mobility remains constant over a wide range of film thicknesses. A clear interface region found for thick HMW P3HT films and it is responsible for charge transport in the OFET measurements. The existence of amorphous regions in between highly-crystalline lamellae (or nanofibrils) for both short and long chain P3HT samples, controls the charge carrier mobility of such semi-crystalline system. Therefore control of this amorphous region could hold the answer for high charge carrier mobility of any semicrystalline polymers.
机译:共轭聚合物是低成本有机场效应晶体管(OFET)有源层最有希望的候选者之一。这些共轭聚合物的载流子迁移率是关键的材料性能,限制了器件的性能。沿着膜的整个厚度的结构有序,特别是在界面区域附近,起着控制这种电性能的重要作用,从而最终提供了很高的器件性能。在目前使用互补技术的工作中,我研究了P3HT薄膜的结构性质随分子量和膜厚的变化。已经进行了详细的结构研究,以了解该聚噻吩家族的内部结构顺序,并因此了解其与电荷载流子迁移率的相关性。这项工作集中于电荷运输对最著名的聚噻吩基团成员,即区域规则的聚(3-己基噻吩)的形态的依赖性。分子量不同的P3HT薄膜(薄的和大体积的)提供了一种理想的系统,用于将共轭聚合物的形态变化与电荷传输的变化相关联,因为发现OFETs中的载流子迁移率增加了四个数量级。随着P3HT的分子量(Mw)从2500 g / mol增加到30,000 g / mol。掠入射X射线散射(GIXS)及其互补技术(例如原子力显微镜(AFM)和透射电子显微镜(TEM))的组合用于测量与不同退火条件,基材表面处理相关的结晶度和晶体取向的变化以恒定的Mw特别是,用于深度解析结构分析的X射线掠入射衍射(GID)。我们注意到P3HT的低和HMW分数(LMW,HMW)以及聚合物样品无序部分的无定形散射,还与薄膜内的晶体排列相关的几个衍射峰。由于主链的堆积,两个分子量部分均显示出垂直于表面的明显的周期性。对于低和高分子量部分,发现这种堆叠的片的平面间距为1.5和1.6nm。这些膜是形式上无定形的,具有分散在无定形基质中的晶畴。在此,观察到纹理化和强取向效应。另一方面,对于低分子量分数,表面和大块样品的X射线衍射数据是不同的,其中CCD图像显示了随机取向的粉末,没有任何优先的纳米晶体取向。这表明总体上具有更高的结晶度,更好的面内堆积和高度取向的晶体的浓度,但迁移率比HMW P3HT低100倍以上。这些与直觉相反的结果表明,共轭聚合物的电荷载流子迁移率与形态的几个不同方面有关。在LMW薄膜的情况下,有序区域嵌入无定形基体中,该基体将微晶与其下一个邻居隔离开来。而在HMW膜中,长链连接小的有序区域,并为电荷穿过膜提供了一条平滑的路径。有机半导体的分子结构和形态是控制有机膜与绝缘体之间界面性质的重要关键因素,因此,一部分研究也集中在界面工程上。我们通过改变介电层(HMDS,OTS)修改了界面层的相互作用。我们在具有化学修饰表面的样品上进行的GIXS结果显示,高度取向的晶体从基板上成核,并且与前5-10层电荷传输的变化相关。结构,热性能与OFET性能之间的相关性提供了强有力的证据,表明由聚(3-己基噻吩)的两种馏分制得的层的传输性能在很大程度上取决于样品的结晶度,部分原因在于样品的结晶性。制备条件下聚合物OFET的OFET迁移率。关于HMW分数的电子和结构性质的比较,我们发现迁移率在很宽的膜厚度范围内保持恒定。在厚的HMW P3HT膜中发现了一个清晰的界面区域,它负责OFET测量中的电荷传输。对于短链和长链P3HT样品,在高结晶度薄片(或纳米原纤维)之间存在无定形区域,可控制这种半结晶系统的载流子迁移率。因此,控制该无定形区域可以为任何半结晶聚合物的高载流子迁移率提供答案。

著录项

  • 作者

    Joshi Siddharth;

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  • 年度 2009
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  • 原文格式 PDF
  • 正文语种 eng
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