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A 14-bit 250 MS/s IF sampling pipelined ADC in 180 nm CMOS process

机译:采用180 nm CMOS工艺的14位250 MS / s IF采样流水线ADC

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摘要

This paper presents a 14-bit 250 MS/s ADC fabricatedudin a 180 nm CMOS process, which aims at optimizing itsudlinearity, operating speed, and power efficiency. The implementedudADC employs an improved SHA with parasitic optimized bootstrappedudswitches to achieve high sampling linearity over a wideudinput frequency range. It also explores a dedicated foregroundudcalibration to correct the capacitor mismatches and the gainuderror of residue amplifier, where a novel configuration schemeudwith little cost for analog front-end is developed. Moreover, audpartial non-overlapping clock scheme associated with a highspeedudreference buffer and fast comparators is proposed toudmaximize the residue settling time. The implemented ADC isudmeasured under different input frequencies with a sampling rateudof 250 MS/s and it consumes 300 mW from a 1.8 V supply. For 30udMHz input, the measured SFDR and SNDR of the ADC is 94.7uddB and 68.5 dB, which can remain over 84.3 dB and 65.4 dB forudup to 400 MHz. The measured DNL and INL after calibrationudare optimized to 0.15 LSB and 1.00 LSB, respectively, while theudWalden FOM at Nyquist frequency is 0.57 pJ/step.
机译:本文提出了一种在180 nm CMOS工艺中制造的14位250 MS / s ADC,旨在优化其线性,工作速度和功率效率。实现的 udADC采用带有寄生优化自举 ud开关的改进型SHA,以在宽的 udinput频率范围内实现高采样线性度。它还探索了专用的前景去校准来校正电容器失配和残留放大器的增益去误差,从而开发了一种新型的配置方案,其模拟前端成本极低。此外,提出了与高速 udreference缓冲区和快速比较器相关联的部分非重叠时钟方案,以 ud最大化残留建立时间。在不同的输入频率下对已实现的ADC进行了测量,采样速率为udof 250 MS / s,从1.8 V电源消耗的功耗为300 mW。对于30 udMHz输入,ADC的实测SFDR和SNDR为94.7 uddB和68.5 dB,对于高达400 MHz的带宽,可以保持84.3 dB和65.4 dB以上。校准后,测得的DNL和INL分别分别优化为0.15 LSB和1.00 LSB,而奈奎斯特频率下的udWalden FOM为0.57 pJ / step。

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