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P-n heterojunctions of indium antimonide on electropolished and chemically polished silicon

机译：电抛光和化学抛光的硅上锑化铟的P-n异质结

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LD2668 .T4 1966 S941

机译：LD2668。Th1966 S941

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Subramanian Ramaswami.;
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年度 1966
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6. High-Speed Scalable Silicon-MoS2 P-N Heterojunction Photodetectors [O] . Veerendra Dhyani, Samaresh Das -1

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7. Reactive ion beam etching of aluminum indium antimonide, gallium indium antimonide heterostructures in electron cyclotron resonance methane/hydrogen/nitrogen/silicon tetrachloride discharges at room temperature [O] . Sendra, J. R., Anguita, José Virgilio, Pérez Camacho, J. J., 1995

机译：在室温下电子回旋共振甲烷/氢/氮/四氯化硅放电中对铝铟锑化物，镓铟锑化物异质结构的反应离子束蚀刻
8. Superconductivity in the artificial metals- metallic indium antimonide, the indium antimonide - tin alloys, and metallic indium telluride [R] . Bommel, H. E., Darnell, A. J., Libby, W. F., 1964

机译：人造金属 - 金属锑化铟，锑化铟锡合金和金属碲化铟的超导电性

P-n heterojunctions of indium antimonide on electropolished and chemically polished silicon

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