B[subscript]12As[subscript]2/SiC pn heterojunction diodes based on the radiation-hard B[subscript]12As[subscript]2 deposited on (0001)n-type 4H–SiC via chemical vapor deposition were demonstrated. The diodes exhibit goodrectifying behavior with an ideality factor of 1.8 and a leakage current as low as 9.4x 10[superscript]-6 A/cm[superscript]2. Capacitance-voltage measurements using a two-frequency technique showed a holeconcentration of ~1.8–2.0 10[superscript]17 cm[superscript]−3 in B[subscript]12As[subscript]2 with a slight increase near the interface due to thepresence of an interfacial layer to accommodate lattice mismatch. Band offsets between the B[subscript]12As[subscript]2and SiC were estimated to be ~1.06 eV and 1.12 eV for conduction band and valance band,respectively.
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机译：展示了通过化学气相沉积法在（0001）n型4H-SiC上沉积的抗辐射B [12] As [2]的B [12As] [2 / SiC] pn异质结二极管。二极管表现出良好的整流性能，理想因数为1.8，漏电流低至9.4x 10 ^ -6 A / cm ^ 2。使用双频技术的电容电压测量显示，在B [下标] 12As [下标] 2中，空穴浓度约为〜1.8-2.0 10 [上标] 17 cm [上标] -3，由于界面的存在，界面附近略有增加适应晶格失配的界面层。对于导带和价带，B [12As] [2]和SiC之间的带隙估计分别为〜1.06 eV和1.12 eV。
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