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Investigation of light-induced defects in hydrogenated amorphous silicon by low temperature annealing and pulsed degradation

机译：通过低温退火和脉冲降解研究氢化非晶硅中的光致缺陷

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Heck Stephan;
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年度 2003
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正文语种 {"code":"de","name":"German","id":7}
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1. Light-induced defect creation under intense pulsed illumination in hydrogenated amorphous silicon [J] . K. MORIGAKI, H. HIKITA, D. C. OGIHARA Journal of optoelectronics and advanced materials . 2009,第1期

机译：氢化非晶硅在强脉冲照明下产生光致缺陷
2. Light-induced defect creation under pulsed subbandgap illumination in hydrogenated amorphous silicon [J] . K. Morigaki, H. Hikita, H. Takemura, Philosophical Magazine Letters . 2003,第5期

机译：氢化非晶硅在脉冲子带隙照射下光致缺陷的产生
3. Anneal treatment to reduce the creation rate of light-induced metastable defects in device-quality hydrogenated amorphous silicon [J] . David C. Bobela, Howard M. Branz, Paul Stradins Applied Physics Letters . 2011,第20期

机译：退火处理可降低器件质量的氢化非晶硅中光诱导的亚稳态缺陷的产生率
4. INVESTIGATION OF LIGHT-INDUCED DEFECT DEPTH PROFILE IN HYDROGENATED AMORPHOUS SILICON FILMS [C] . S.Shimizu, P. Stradins, M. Kondo, Symposium on Amorphous and Heterogeneous Silicon-Based Films-2001, Apr 16-20, 2001, San Francisco, California . 2001

机译：加氢非晶硅薄膜的光致缺陷深度剖面的研究
5. Improving the light-induced degradation of hydrogenated amorphous silicon solar cells using fabrication at elevated temperatures and low pressure [D] . Modtland, Brian Joseph 2013

机译：通过在高温和低压下制造来改善氢化非晶硅太阳能电池的光诱导降解
6. Degradation by water vapor of hydrogenated amorphous silicon oxynitride films grown at low temperature [O] . Hyung-Ik Lee, Jong-Bong Park, Wenxu Xianyu, -1

机译：低温生长的氢化非晶硅氧氮化硅膜的水蒸气降解作用
7. Investigation of light-induced defects in hydrogenated amorphous silicon by low temperature annealing and pulsed degradation [O] . Heck Stephan 2002

机译：通过低温退火和脉冲降解研究氢化非晶硅中的光致缺陷
8. Microscopic origin of the light-induced defects in hydrogenated nitrogen-rich amorphous silicon nitride films. [R] . J. Kanicki W. L. Warren C. H. Seager M. S. Crowder P. M. Lenahan 1991

机译：氢化富氮非晶氮化硅薄膜中光诱导缺陷的微观起源。

Investigation of light-induced defects in hydrogenated amorphous silicon by low temperature annealing and pulsed degradation

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