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Caracterización de las propiedades magnéticas de películas delgadas de Fe1-xGax crecidas epitaxialmente sobre ZnSe/GaAs (001)

机译:ZnSe / GaAs(001)上外延生长的Fe1-xGax薄膜的磁性能表征

摘要

In this work, the correlation between magnetic anisotropies, Ga concentration and magnetic properties was investigated in Fe1xGax thin _lms, grown on a ZnSe/GaAs(001) substrate. The range of analyzed concentrations varies from x = 0 up to 0:29, and thicknesses go from 55nm to 72 nm. Besides, magnetic activation reversal volumes were calculated. Firstly, using a VSM magnetic properties, such as saturation magnetization (Msat), remanence magnetization (Mrem), coercive field (HC) and saturation field (Hsat), were measured in order to analyze the correlation between x and anisotropies. For x = 0:18 and x = 0:20, a region of linear dependence on the MH curves was observed, from remanence up to almost saturation, which is correlated with the maxima in HC and Hsat and the minimum in Mrem. This linear dependence appears as a result of an out of plane anisotropy (Kn), which has been already observed in thin films of other materials, and constitutes an indicator of a striped pattern magnetic domain formation. Afterwards, using a MFM, the magnetic domain structure was imaged in remanence (after saturating the sample) to investigate the correlation between this structure and the magnetic properties measured previously. It was found, indeed, that the same samples exhibiting the M vs H linear dependence have a striped magnetic domain structure; which is again consistent with Kn. The magnetization has both an in-plane component, that points in the direction of applied field, and an out-of-plane component (z axis), which points alternately in z and z. Moreover, when the field applied for saturating the sample is in the out of plane direction, a bubble pattern is observed for the same samples because, in this case there is no special direction in the plane of the sample. Then, using a protocol known as DCD (plot), the remanence magnetization (MDCD) after applying a magnetic field (HDCD) was obtained, in order to calculate the irreversible magnetic susceptibility (irr). irr is related to the changes in magnetization due to irreversible processes associated with the inversion of M, which process is strongly associated to magnetic anisotropies. In addition, magnetic relaxation was measured for each sample and thus, magnetic viscosity (S) was obtained. It was found that the maximum S appears near HC, which is expected as the most important changes in magnetization occur in the vicinity of HC. Finally, with all measured values, activation volumes were calculated; the order of magnitude obtained varies from _ 105 nm3 for pure Fe to 104 nm3 for x = 0:29, with the minimum at x = 0:18. Again, this is consistent with the presence Kn for the samples with x = 0:18 and 0:20, as anisotropy energy increases with volume, which energetically favors small activation volumes.
机译:在这项工作中,研究了在ZnSe / GaAs(001)衬底上生长的Fe1xGax薄膜中的磁各向异性,Ga浓度与磁性能之间的相关性。分析浓度的范围从x = 0到0:29不等,厚度从55nm到72nm。此外,计算了磁活化反转体积。首先,使用VSM的磁性,例如饱和磁化强度(Msat),剩磁(Mrem),矫顽场(HC)和饱和场(Hsat),以分析x与各向异性之间的相关性。对于x = 0:18和x = 0:20,观察到了一个与MH曲线线性相关的区域,从剩磁到几乎饱和,这与HC和Hsat的最大值以及Mrem的最小值相关。这种线性相关性是由于平面外各向异性(Kn)的结果而出现的,该各向异性已在其他材料的薄膜中观察到,并构成了条纹磁畴形成的指示。然后,使用MFM对磁畴结构进行剩磁成像(将样品浸透后),以研究该结构与先前测得的磁性能之间的相关性。实际上,已经发现,表现出M对H线性依赖性的相同样品具有带状磁畴结构。这又与Kn一致。磁化强度既有指向外加磁场的平面内分量,又有指向z和z的平面外分量(z轴)。此外,当用于使样品饱和的场在平面外时,对于相同的样品观察到气泡图案,因为在这种情况下,在样品的平面内没有特殊的方向。然后,使用称为DCD(图)的协议,获得施加磁场(HDCD)后的剩磁(MDCD),以计算不可逆磁化率(irr)。 irr与由于与M的倒转相关的不可逆过程而引起的磁化强度变化有关,该过程与磁各向异性密切相关。另外,测量每个样品的磁弛豫,从而获得磁粘度(S)。发现最大的S出现在HC附近,这是预期的,因为最重要的磁化变化发生在HC附近。最后,利用所有测量值,计算出激活量。所得的数量级从纯铁的105 nm3到x = 0:29的104 nm3不等,x的最小值为0:18。再次,这与x = 0:18和0:20的样品的存在Kn一致,因为各向异性能量随体积增加而增加,这在能量上有利于较小的活化体积。

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    López Duque Pablo Andrés;

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  • 年度 2015
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  • 正文语种 spa
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