El futuro del almacenamiento de información estudio de la tecnología de memorias resistivas basado en el modelo de contactos de punto cuántico

摘要

Recently, the model based on the quantum point contacts (QPC) achieved important results for describing the conduction mechanism of HfO2-based resistive random access memories (RRAM). This work makes a study of two important aspects related to the physics of these memories: a possible dependence of the RRAM conduction mechanism with respect to the scaling area and the influence of the compliance transistor.According to experimental results it was found that the conduction mechanism of the RRAM memories is essentially independent of their scaling area and that the compliance transistor influence can be cancelled by applying the correct polarization. In addition, it was found that the forming voltage is inversely proportional to the cell area.