Measurement of Lattice Strain of Striped Si0_2/GaAs Substrate by X-ray Double Crystal Method

摘要

A measurement method for relative lattice strain of striped Si0_2/GaAs and the results of the measurements are presented. As the fundamental of the method the peak - splitting angle of the rocking curve of X - ray double crystal method due to the relative lattice strain is used. The method is applied to some samples with different stripe widths. The results of the measurements reveal the following facts. The relative lattice strain varies inversely as the stripe width. The equation of the relationship is given by assuming the exponential distribution of the lattice strain. The relative lattice strain is divided into two terms by elastic theory. One is the spacing strain of the parallel atomic planes and the other is the tilting strain of the planes.