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Evaluation of crystalline germanium thin films electrodeposited on copper substrates from propylene glycol electrolyte

机译:丙二醇电解质电沉积在铜基板上的结晶锗薄膜的评估

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摘要

Germanium thin films electrochemically deposited at 300 K from a solution of GeCl4, in propylene glycol were investigated using X-ray diffraction (XRD), infrared (IR) spectroscopy and atomic force microscopy (AFM). XRD reveals that the germanium electrodeposits are of crystalline structure and have the preferred crystallographic growth orientation [220]. The presence of the hydrogen bonding in the germanium films such as Ge-H and Ge-H-2 is shown from the IR absorption and does not cause a phase transition from crystalline structures to amorphous structures. The AFM images exhibit anomalous surface roughening behaviors in growth that deviate from statistical surface growth models and indicate a transition from rough surfaces to smooth surfaces.
机译:使用X射线衍射(XRD),红外(IR)光谱和原子力显微镜(AFM)研究了GeCl4在丙二醇中以300 K电化学沉积的锗薄膜。 XRD显示,锗电沉积物具有晶体结构,并具有较好的晶体学生长取向[220]。从IR吸收显示出锗膜如Ge-H和Ge-H-2中氢键的存在,并且不会引起从晶体结构到非晶结构的相变。 AFM图像在生长过程中表现出异常的表面粗糙化行为,这与统计表面生长模型有所不同,并表明从粗糙表面到平滑表面的过渡。

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